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Публикации

Научни интереси

проф. дфзн Евгения Петрова Вълчева

Физически факултет на СУ “Св. Климент Охридски”

катедра: Физика на твърдото тяло и микроелектроника

кабинет: Б 209

лаборатории: Б 220, Б 222, А 206

e-mail: epv(at)phys.uni-sofia(.)bg

тел.(+359 2) 8161 898

Избрани публикации

1. E.Valcheva , "Investigation on the Physical Properties of the Interface of PECVD SiO 2 -InSb", Advances in Low-temperature Plasma Chemistry, Technology, Applications , V.4, ed. H.V.Boenig, (Technomic Publ. Co., 1992), p. 101.

2. E.Valcheva , T.Paskova, R.Yakimova, "Antimony doped GaAs: A model of current transport mechanism", J. Vac. Sci. Technol. B 14 , 3582 (1996).

3. E.Valcheva, “ GaAs/Al x Ga 1-x As heterointerface properties assessment by means of capacitive methodic”, Bulg. J. Phys. 23, No 5-6, 34 (1996) .

4. E.Valcheva , "Characterization of GaAs/Al x Ga 1-x As heterointerface defects by means of capacitive measurements", Appl. Phys. A. 65 , 39 (1997).

5. E.Valcheva , "Spectroscopic studies of native oxide formation on SiO 2 /InSb interface", J.Vac. Sci. Technol. A 15 , 2489 (1997).

6. V. Dimitrova, D. Manova, E. Valcheva , “Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions”, Mater. Sci.& Eng. B 68 ,1 (1999).

7. E.Valcheva , T.Paskova, I.G.Ivanov, R.Yakimova, Q.Wahab, S.Savage, N.Nordell, and C.I.Harris , “B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high temperature annealing”, J.Vac. Sci. Technol . B 17, 1040 (1999).

8. E. Valcheva ,T.Paskova,S.Tungasmita, P.O.Å. Persson, J.Birch, E.B.Svedberg, L. Hultman, and B. Monemar, “Interface structure of hydride vapour phase epitaxial GaN grown with high temperature reactively sputtered AlN buffer,“ Appl. Phys. Lett. 76 ,1860 (2000).

9. E. Valcheva , T. Paskova, M.V. Abrashev, P.P. Paskov, P.O.Å. Persson, E.M. Goldys, R. Beccard, M. Heuken, and B. Monemar, “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates”, J. Appl. Phys. 90 , 6011 (2001).

10. E. Valcheva , T. Paskova, M.V. Abrashev, P.Å.O. Persson, P.P. Paskov, E.M. Goldys, R. Beccard, M. Heuken, and B. Monemar, “Impact of MOCVD-GaN templates on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN”, Mater.Sci.& Eng.B 82 , 35 (2001).

11. T. Paskova, E. Valcheva , B. Monemar, review paper, “Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems”, Defects and Diffusion in Semiconductors IV, (Trans Tech Publications, 2002), ed. D.J. Fisher, Defect and Diffusion Forum, vol. 200-202 (2002), p.1-28.

12. E. Valcheva, T. Paskova, P. O. Å. Persson, L. Hultman, and B. Monemar, “Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy”, Appl. Phys. Lett. 80 , 1550 (2002).

13. E. Valcheva , T. Paskova, and B. Monemar, “Extended defects in GaN films grown at high growth rate”, J. of Physics: Condensed Matter 14 , 13269 (2002).

14. E. Valcheva , T. Paskova and B. Monemar, “ Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers,” J. Cryst. Growth 255 , 19 (2003).

15. E. Valcheva, T. Paskova, G. Radnozi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki; “Growth-induced defects in AlN/GaN superlattices with different periods”, Physica B: Condensed Matter, 340-342c , p. 1129 (2003).

16. V. Darakchieva, P. P. Paskov, E. Valcheva , T. Paskova, B. Monemar, H. Lu,W. J. Schaff, “Deformation potentials of the E 1 (TO) and E 2 modes of InN,” Appl. Phys. Lett., 84 , 3636 (2004).

17. Kasic, E. Valcheva , and B. Monemar, H. Lu,W. J. Schaff, “ InN dielectric function from the mid-infrared to the ultra-violet range”, Phys. Rev. B 70, 115217 (2004).

18. V. Darakchieva, E. Valcheva , P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki, “Phonon mode behavior in strained wurtzite AlN/GaN superlattices”, Phys. Rev. B 71 , 115329 (2005).

19. E . Valcheva , S. Alexandrova , S. Dimitrov , D. Manova, ”AlN thin films grown by reactive magnetron sputtering for microelectronics applications”, Proc. 14 th Int. Scientific and Applied Science Conf. ELECTRONICS ET' 2005, 21 – 23 September, Sozopol, Bulgaria, Book 5, p.21-24.

20. E. Valcheva, S. Alexandrova, S. Dimitrov, H. Lu , W. J. Schaff, “ Recombination processes with and without momentum conservation in degenerate InN,” phys. stat. sol. (a) 203, 75, (2006).

21. E. Valcheva , J.Birch, P.O.Å. Persson, S.Tungasmita, L. Hultman, “ Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering”, J. Appl. Phys. 100, 123514 (2006).

22. E . Valcheva , D . Manova , S . M ä ndl , S . Alexandrova , J . Lutz , and S . Dimitrov , “ Ion beam synthesis of AlN nanostructured thin films ,” J Optoelectr . and Adv. Mater , vol . 9 , No . 1 , ( 2007 ) .

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